K9F2808U0C-DCB0 suppliers, K9F2808U0C-DCB0 price trend, K9F2808U0C-DCB0 PDF download, circuit diagram from SeekIC

Position: Home > Datasheet list > K9F Series > Index K > K9F2808U0C-DCB0

Table of contents:
K9F2808U0C-DCB0
Suppliers
DataSheet
General Description

Purchase K9F2808U0C-DCB0, In-stock K9F2808U0C-DCB0 From SeekIC.

MFG:SAMSUNG Package Cooled:FBGA D/C:2003

K9F Series Datasheet download

Five Points

Part Number: K9F2808U0C-DCB0

MFG: SAMSUNG

Package Cooled: FBGA

D/C: 2003

Description: Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V o...

K9F2808U0C-DCB0 General Description

Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the writeintensive systems can take advantage of the K9F28XXX0C's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F28XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.

K9F2808U0C-DCB0 Maximum Ratings

Parameter		Symbol	Rating		Unit
			K9F28XXQ0C(1.8V)	K9F28XXU0C(3.3V)
Voltage on any pin relative to VSS		V_IN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		V_CC	-0.2 to + 2.45	-0.6 to + 4.6
		V_CCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F28XXX0C-XCB0	T_BIAS	-10 to +125
	K9F28XXX0C-XIB0		-40 to +125
Storage Temperature	K9F28XXX0C-XCB0	T_STG	-65 to +150
	K9F28XXX0C-XIB0
Short Circuit Current		Ios	5		mA

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V_CC,+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9F2808U0C-DCB0 Features

· Voltage Supply
- 1.8V device(K9F28XXQ0C) :  1.7~1.95V
- 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F2808X0C) :   (16M + 512K)bit x 8bit
- X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit
- Data Register
- X8 device(K9F2808X0C) : (512 + 16)bit x 8bit
- X16 device(K9F2816X0C) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F2808X0C) :   (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F2808X0C) :   (16K + 512)Byte
- X16 device(K9F2816X0C) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F2808X0C) :   (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Unique ID for Copyright Protection
· Package
- K9F28XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F28XXU0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F28XXX0C-DCB0/DIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F28XXX0C-HCB0/HIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.

K9F2808U0C-DCB0 Connection Diagram

K9F2808U0C-DCB0 datasheet

K9F2808U0C-DCB0
PDF/DataSheet Download

Datasheet: K9F2808U0C-DCB0
File Size: 597490 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Click here to Download

·K9F1208B0B
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
1054247 KB
·K9F1208D0A
SAMSUNG [Samsung semiconductor]
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
766143 KB
·K9F1208D0A-P
SAMSUNG [Samsung semiconductor]
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
766143 KB
·K9F1208D0A-Y
SAMSUNG [Samsung semiconductor]
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
766143 KB
·K9F1208D0B
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
785423 KB
·K9F1208D0B-D
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
785423 KB
·K9F1208D0B-Y
SAMSUNG [Samsung semiconductor]
64M x 8 Bit NAND Flash Memory
785423 KB
·K9F1208Q0A
SAMSUNG [Samsung semiconductor]
512Mb/256Mb 1.8V NAND Flash Errata
671684 KB

Related Part Number

K9F2808U0C-DCB0 Relative Products

K9F2808U0C
Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 2...
K9F2808U0B-Y
The K9F2808U0B-Y is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation prog...
K9F2808U0B-V
The K9F2808U0B-V is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The K9F2808U0B-V is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operatio...
K9F2808U0B-D
The K9F2808U0B-D is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The K9F2808U0B-D is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operatio...
K9F2808U0A-YIB0
The K9F2808U0A-YIB0 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200m...
K9F2808U0A-YCB0
The K9F2808U0A-YCB0 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200m...

Hotspot Suppliers Product

Product List

ATMEGA8515-16PU
Price: 3-6 USD
IC AVR MCU 8K 16MHZ 5V 40DIP - ATMEGA8515-16PU
HCPL-3120
Price: 0.1-1 USD
Optocoupler, DIP, 25mA
TMS32C6414EZLZ5E0
Price: 130-150 USD
fixed-point DSP, very-long-instruction-word, highest-performance
LP2951ACMX
Price: 0.1-0.5 USD
Adjustable Micropower Voltage Regulator, SOP8, -0.3V to +30V, High accuracy output voltage
MRF374A
Price: 60-70 USD
RF Power Field-Effect Transistor, Excellent Thermal Stability, RoHS Compliant, 302W, Integrated ES...
1N4004
Price: 0.1-100 USD
axial lead, standard recovery rectifier, SOD-123, 400V, 1.0A, Pb-Free external lead, ON Semicondu...
2SC3356
Price: 0.02-1 USD
microwaveN low noise amplifier, NPN, 20 V, silicon epitaxial transistor, SOT23
SN74AUCH16244DGGR
Price: 0.16-3.18 USD
IC BUFF/DVR TRI-ST 16BIT 48TSSOP - SN74AUCH16244DGGR
LP3872ES-1.8
Price: 1-2 USD
Linear Regulator, TO-263, 10nA
MAX187BCWE
Price: 4.8-5.5 USD
12-bit analog-to-digital converter, -0.3V to +6V, 500mW, 4.0mA, 75kHz Sampling Rate, Low Power, SO...
MC74VHC1G02DFT1G
Price: 0.1-0.2 USD
CMOS 2-input NOR gate, -0.5 to +7.0 V, Power Down Protection, 200 mW
RS4N-56R0
Price: 0.001-5 USD
RS4N-56R0, SMD, Integrated Circuits, Cyntec co., LTD.

Map list: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 All