Purchase K9F2G08Q0M, In-stock K9F2G08Q0M From SeekIC.
Part Number: K9F2G08Q0M
Description: Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides ...
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K9F2G08Q0M
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DataSheet
General Description
K9F2G08Q0M General Description
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16 device)..
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility.
K9F2G08Q0M Maximum Ratings
| Parameter | Symbol | Rating | Unit | ||
| K9F2GXXQ0M(1.8V) | K9F2GXXU0M(3.3V) | ||||
| Voltage on any pin relative to VSS | VIN/OUT |
-0.6to+2.45 | -0.6to+4.6 | V | |
| VCC | -0.6 to + 2.45 | -0.6 to + 4.6 | |||
| TemperatureUnderBias | K9F2GXXU0M-XCB0 | TBIAS |
-10 to +125 |
°C | |
| K9F2GXXU0M-XIB0 | -40 to +125 | ||||
| Storage Temperature | K9F2GXXU0M-XCB0 | TSTG | -40 to +125 | °C | |
| K9F2GXXU0M-XIB0 | |||||
| Short Circuit Current | Ios |
5 |
mA | ||
K9F2G08Q0M Features
Voltage Supply
-1.8V device(K9F2GXXQ0M): 1.70V~1.95V
-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
Organization
- Memory Cell Array
-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
- Data Register
-X8 device(K9F2G08X0M): (2K + 64)bit x8bit
-X16 device(K9F2G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit
-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
Automatic Program and Erase
- Page Program
-X8 device(K9F2G08X0M) : (2K + 64)Byte
-X16 device(K9F2G16X0M) : (1K + 32)Word
- Block Erase
-X8 device(K9F2G08X0M) : (128K + 4K)Byte
-X16 device(K9F2G16X0M) : (64K + 2K)Word
Page Read Operation
- Page Size
- X8 device(K9F2G08X0M) : 2K-Byte
- X16 device(K9F2G16X0M) : 1K-Word
- Random Read : 25ms(Max.)
- Serial Access : 50ns(Min.)
30ns(Min., K9F2G08U0M only)
Fast Write Cycle Time
- Page Program time : 300ms(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection Package :
- K9F2GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
-1.8V device(K9F2GXXQ0M): 1.70V~1.95V
-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
Organization
- Memory Cell Array
-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
- Data Register
-X8 device(K9F2G08X0M): (2K + 64)bit x8bit
-X16 device(K9F2G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit
-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
Automatic Program and Erase
- Page Program
-X8 device(K9F2G08X0M) : (2K + 64)Byte
-X16 device(K9F2G16X0M) : (1K + 32)Word
- Block Erase
-X8 device(K9F2G08X0M) : (128K + 4K)Byte
-X16 device(K9F2G16X0M) : (64K + 2K)Word
Page Read Operation
- Page Size
- X8 device(K9F2G08X0M) : 2K-Byte
- X16 device(K9F2G16X0M) : 1K-Word
- Random Read : 25ms(Max.)
- Serial Access : 50ns(Min.)
30ns(Min., K9F2G08U0M only)
Fast Write Cycle Time
- Page Program time : 300ms(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection Package :
- K9F2GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
K9F2G08Q0M Connection Diagram
K9F2G08Q0M
PDF/DataSheet Download
- Datasheet: K9F2G08Q0M
- File Size: 616391 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K9F1208B0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 1054247 KB
- ·K9F1208D0A
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-P
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-D
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208Q0A
- SAMSUNG [Samsung semiconductor]
- 512Mb/256Mb 1.8V NAND Flash Errata
- 671684 KB
K9F2G08Q0M Relative Products
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