Purchase K9F2G08R0A-J, In-stock K9F2G08R0A-J From SeekIC.


Part Number: K9F2G08R0A-J
Description: Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell p...


Description: Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell p...
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
| Parameter | Symbol | Rating | Unit | ||
| 1.8V | 3.3V | ||||
| Voltage on any pin relative to VSS | VCC | -0.6 to +2.45 | -0.6 to +4.6 | V | |
| VIN | -0.6 to +2.45 | -0.6 to +4.6 | |||
| VI/O | -0.6 to Vcc + 0.3 (< 2.45V) | -0.6 to Vcc + 0.3 (< 4.6V) | |||
| Temperature Under Bias |
K9F2G08X0A-XCB0 | TBIAS | -10 to +125 | °C | |
| K9F2G08X0A-XIB0 | -40 to +125 | ||||
| Storage Temperature | K9F2G08X0A-XCB0 | TSTG | -65 to +150 | °C | |
| K9F2G08X0A-XIB0 | |||||
| Short Circuit Current | IOS | 5 | mA | ||
K9F1208B0B
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