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Part Number: K9F2G08R0A-J

 

 

 

 

Description: Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell p...


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K9F2G08R0A-J General Description


Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9F2G08R0A-J Maximum Ratings

Parameter Symbol Rating Unit
1.8V 3.3V
Voltage on any pin relative to VSS VCC -0.6 to +2.45 -0.6 to +4.6 V
VIN -0.6 to +2.45 -0.6 to +4.6
VI/O -0.6 to Vcc + 0.3 (< 2.45V) -0.6 to Vcc + 0.3 (< 4.6V)
Temperature Under
Bias
K9F2G08X0A-XCB0 TBIAS -10 to +125 °C
K9F2G08X0A-XIB0 -40 to +125
Storage Temperature K9F2G08X0A-XCB0 TSTG -65 to +150 °C
K9F2G08X0A-XIB0
Short Circuit Current IOS 5 mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9F2G08R0A-J Features

• Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25s(Max.)
- Serial Access : 25ns(Min.)
  (*K9F2G08R0A: tRC = 42ns(Min))
  256M x 8 Bit NAND Flash Memory
• Fast Write Cycle Time
- Page Program time : 200s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
  63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
  48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
  52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

K9F2G08R0A-J Connection Diagram

K9F2G08R0A-J  Connection Diagram

K9F2G08R0A-J datasheet

K9F1208B0B
PDF/DataSheet Download

  • Datasheet: K9F1208B0B
  • File Size: 1054247 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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