Features: • Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K +...
K9F2G08U0A: Features: • Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page ...
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Features: *Voltage Supply - K9F2808Q0B : 1.7~1.9V - K9F2808U0B : 2.7 ~ 3.6 V *Organization - Memo...
Features: · Voltage Supply- 1.8V device(K9F28XXQ0C) :1.7~1.95V- 3.3V device(K9F28XXU0C) : 2.7 ~ 3....
Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit ...
The K9F2G08U0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
The feature of the K9F2G08U0A are:(1)Voltage Supply - 1.65V ~ 1.95V- 2.70V ~ 3.60V; (2)Organization - Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit ; (3)Automatic Program and Erase- Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte; (4)Page Read Operation- Page Size : (2K + 64)Byte- Random Read : 25s(Max.)- Serial Access : 25ns(Min.) ; (5)Fast Write Cycle Time - Page Program time : 200s(Typ.) - Block Erase Time : 1.5ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection - Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)- Data Retention : 10 Years; (9)Command Driven Operation; (10)Intelligent Copy-Back with internal 1bit/528Byte EDC; (11)Unique ID for Copyright Protection; (12)Package : - K9F2G08R0A JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- K9F2G08U0A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch) .
If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .