K9F2G08U0APCB0

The K9F2G08U0APCB0 is one member of the K9F4G08U0A which is designed as the 2G-bit NAND flash memory family with spare 64M-bit. This device has a program operation that can be performed in typical 200s on the (2K+64)Byte page, and has an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Also this device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Features of the K9F2G08U0APCB0 are:(1)voltage supply is 1.65 V to 3.60 V;(2)organization is memory cell array: (256M + 8M) x 8bit and data register: (2K + 64) x 8bit;(3)fast write cycle time: page program time: (2K + 64) byte and block erase time: (128K + 4K) byte;(4)command/address/data multiplexed I/O port;(5)hardware data protection: program/erase lockout during power transitions;(6)command driven operation;(7)intelligent copy-back with internal 1bit/528 Byte EDC;(8)unique ID for copyright protection.

The absolute maximum ratings of the K9F2G08U0APCB0 can be summarized as:(1)Voltage on any pin relative to Vss: -0.6 V to +4.6 V;(2)temperature under bias: -40 °C to +125 °C;(3)storage temperature: -65 to +150 °C;(4)Short Circuit Current: 5 mA.

The electrical characteristics of this device can be summarized as:(1)Stand-by Current(TTL): 1 mA;(2)Stand-by Current(CMOS): 10 to 50 uA;(3)Input Leakage Current: ±10 A;(4)Output Leakage Current: ±10 A;(5)Input High Voltage: 0.8xVcc to Vcc+0.3 V;(6)Input Low Voltage, All inputs: -0.3 to 0.2xVcc V;(7)Output High Voltage Level: 2.4 V;(8)Output Low Voltage Level: 0.4 mA;(9)Output Low Current(R/B): 8 to 10 mA. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .