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Part Number: K9F2G08UOM-YCB0

Category: Other

MFG: Other

 

 

Description: The K9F2G08UOM-YCB0 is designed as one kind of 256M x 8 bit NAND flash memory device that provides the most costeffective...


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K9F2G08UOM-YCB0 General Description


The K9F2G08UOM-YCB0 is designed as one kind of 256M x 8 bit NAND flash memory device that provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block.

Features of the K9F2G08UOM-YCB0 are:(1)Voltage Supply: 1.65V to 1.95V and 2.70V to 3.60V;(2)Unique ID for Copyright Protection;(3)Intelligent Copy-Back with internal 1bit/528Byte EDC;(4)Command Driven Operation;(5)Reliable CMOS Floating-Gate Technology;(6)Hardware Data Protection - Program/Erase Lockout During Power Transitions;(7)Command/Address/Data Multiplexed I/O Port;(8)Fast Write Cycle Time: Page Program time is 200 s(Typ.) and Block Erase Time is 1.5 ms(Typ.).etx.

The absolute maximum ratings of the K9F2G08UOM-YCB0 can be summarized as:(1)Voltage on any pin relative to VSS: -0.6 to +2.45 V or -0.6 to +4.6 V;(2)Temperature Under Bias: -10 to +125 ;(3)Storage Temperature: -65 to +150 °C;(4)Short Circuit Current: 5 mA. If you want to know more information such as the electrical characteristics about the K9F2G08UOM-YCB0, please download the datasheet in www.seekic.com or www.chinaicmart.com.

K9F2G08UOM-YCB0 Connection Diagram

K9F2G08UOM-YCB0  Connection Diagram

K9F2G08UOM-YCB0 datasheet

K9F1208B0B
PDF/DataSheet Download

  • Datasheet: K9F1208B0B
  • File Size: 1054247 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

Find K9F2G08UOM-YCB0 Suppliers

  • ·K9F1208D0A
  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory 
  • 766143 KB
  • K9F1208D0A Datasheet Download
  • ·K9F1208D0A-P
  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory 
  • 766143 KB
  • K9F1208D0A-P Datasheet Download
  • ·K9F1208D0A-Y
  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory 
  • 766143 KB
  • K9F1208D0A-Y Datasheet Download
  • ·K9F1208D0B
  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit NAND Flash Memory 
  • 785423 KB
  • K9F1208D0B Datasheet Download
  • ·K9F1208D0B-D
  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit NAND Flash Memory 
  • 785423 KB
  • K9F1208D0B-D Datasheet Download
  • ·K9F1208D0B-Y
  • SAMSUNG [Samsung semiconductor] 
  • 64M x 8 Bit NAND Flash Memory 
  • 785423 KB
  • K9F1208D0B-Y Datasheet Download
  • ·K9F1208Q0A
  • SAMSUNG [Samsung semiconductor] 
  • 512Mb/256Mb 1.8V NAND Flash Errata 
  • 671684 KB
  • K9F1208Q0A Datasheet Download
  • ·K9F1208Q0A-XXB0
  • SAMSUNG [Samsung semiconductor] 
  • 512Mb/256Mb 1.8V NAND Flash Errata 
  • 826652 KB
  • K9F1208Q0A-XXB0 Datasheet Download

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    The K9F2G08UOM-PCBO is a kind of 2G bit with spare 64M bit capacity and the NAND cell can offer the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056...

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