K9F5608U0C-FCB0 Selling Leads, Price trend, K9F5608U0C-FCB0 DataSheet download, circuit diagram from SeekIC.com

Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 2.65V device(K9F56XXD0C) : 2.4~2.9V- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V· Organization- Memory Cell Array- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit- Data Register- X8 devic...

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SeekIC No. : 004383467 Detail

K9F5608U0C-FCB0: Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 2.65V device(K9F56XXD0C) : 2.4~2.9V- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V· Organization- Memory Cell Array- X8 device(K9F5608X0C) :...

K9F5608U0C-FCB0 Data Sheet

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Part Number:: K9F5608U0C-FCB0
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/5

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Product Details

Description

Features:

· Voltage Supply
- 1.8V device(K9F56XXQ0C) : 1.70~1.95V
- 2.65V device(K9F56XXD0C) : 2.4~2.9V
- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0C) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0C) : (16K + 512)Byte
- X16 device(K9F5616X0C) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Power-On Auto-Read Operation
· Safe Lock Mechanism
· Package
- K9F56XXX0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0C-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXX0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F56XXX0C-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F5608U0C-V,F(WSOPI ) is the same device as
K9F5608U0C-Y,P(TSOP1) except package type.

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Rating		Unit
			1.8V	3.3V
Voltage on any pin relative to VSS		V_CC	-0.6 to +2.45	-0.6 to +4.6	V
		V_IN	-0.2 to + 2.45	-0.6 to +4.6
		V_CCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F56XXX0C-XCB0	T_BIAS	-10 to +125		°C
	K9F56XXX0C-XIB0		-40 to +125
Storage Temperature	K9F56XXX0C-XCB0	T_STG	-65 to +150		°C
	K9F56XXX0C-XIB0
Short Circuit Current		I_OS	5		mA

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliabilit

Description

Offered in 32Mx8bit or 16Mx16bit, the K9F5608U0C-FCB0 is 256M bit with spare 8M bit capacity. The K9F5608U0C-FCB0 is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608U0C-FCB0 extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F5608U0C-FCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9F5608U0C-FCB0

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