Purchase K9F5616U0B-YIB0, In-stock K9F5616U0B-YIB0 From SeekIC.
Part Number: K9F5616U0B-YIB0
Description: Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in...
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K9F5616U0B-YIB0
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General Description
K9F5616U0B-YIB0 General Description
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in ypical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F56XXX0Bs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
K9F5616U0B-YIB0 Maximum Ratings
| Parameter | Symbol | Rating | Unit | ||
| K9F56XXQ0B(1.8V) | K9F56XXU0B(3.3V) | ||||
| Voltage on any pin relative to VSS | VIN/OUT | -0.6 to + 2.45 | -0.6 to + 4.6 | V | |
| VCC | -0.2 to + 2.45 | -0.6 to + 4.6 | |||
| VCCQ | -0.2 to + 2.45 | -0.6 to + 4.6 | |||
| Temperature Under Bias |
K9F56XXX0B-XCB0 | TBIAS |
-10 to + 125 |
||
| K9F56XXX0B-XIB0 |
-40 to +125 | ||||
| Storage Temperature | K9F56XXX0B-XCB0 | TSTG |
-65 to +150 |
||
| K9F56XXX0B-XIB0 | |||||
| Short Circuit Current | Ios |
5 |
|||
K9F5616U0B-YIB0 Features
*Voltage Supply
- 1.8V device(K9F56XXQ0B) : 1.70~1.95V
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V
*Organization
- Memory Cell Array
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit
*Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0B) : (16K + 512)Byte
- X16 device(K9F5616X0B) : ( 8K + 256)Word
*Page Read Operation
- Page Size
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
*Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
- Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
*Command Register Operation
*Intelligent Copy-Back
*Unique ID for Copyright Protection
*Package
- K9F56XXU0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F56XXX0B-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F5608U0B-V,F(WSOPI ) is the same device as
K9F5608U0B-Y,P(TSOP1) except package type.
- 1.8V device(K9F56XXQ0B) : 1.70~1.95V
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V
*Organization
- Memory Cell Array
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit
*Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0B) : (16K + 512)Byte
- X16 device(K9F5616X0B) : ( 8K + 256)Word
*Page Read Operation
- Page Size
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
*Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
- Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
*Command Register Operation
*Intelligent Copy-Back
*Unique ID for Copyright Protection
*Package
- K9F56XXU0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F56XXX0B-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F5608U0B-V,F(WSOPI ) is the same device as
K9F5608U0B-Y,P(TSOP1) except package type.
K9F5616U0B-YIB0 Connection Diagram
K9F5616U0B-YIB0
PDF/DataSheet Download
- Datasheet: K9F5616U0B-YIB0
- File Size: 619458 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·K9F1208B0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 1054247 KB
- ·K9F1208D0A
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-P
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0A-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
- 766143 KB
- ·K9F1208D0B
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-D
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208D0B-Y
- SAMSUNG [Samsung semiconductor]
- 64M x 8 Bit NAND Flash Memory
- 785423 KB
- ·K9F1208Q0A
- SAMSUNG [Samsung semiconductor]
- 512Mb/256Mb 1.8V NAND Flash Errata
- 671684 KB
K9F5616U0B-YIB0 Relative Products
K9F5616U0B-YCB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-YCB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-YCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-PIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-PIB0is 256M bit with spare 8M bit capacity. The K9F5616U0B-PIB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operat...
K9F5616U0B-PCB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-PCB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-PCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-HIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-HIB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-HIB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-HCB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-HCB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-HCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
K9F5616U0B-DIB0
Offered in 32Mx8bit or 16Mx16bit, the K9F5616U0B-DIB0 is 256M bit with spare 8M bit capacity. The K9F5616U0B-DIB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program opera...
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