K9F6408Q0C

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The K9F6408Q0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 1.8V or 3.3V Vcc. K9F6408Q0C's NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller K9F6408Q0C automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F6408Q0C extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The K9F6408Q0C is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.