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Part Number: K9F6408U0C

 

 

 

 

Description: The K9F6408X0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device i...


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K9F6408U0C General Description


The K9F6408X0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F6408X0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The K9F6408X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.

K9F6408U0C Maximum Ratings

Parameter
Symbol
Rating
Unit
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
V
VccQ
-0.2 to + 2.45
-0.6 to + 4.6
V
Temperature
Under Bias
K9F6408X0C-XCB0
TBIAS
-10 to + 125
K9F6408X0C-XIB0
-40 to + 125
Storage Temperature
TSTG
-65 to + 150


NOTE :
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9F6408U0C Features

· Voltage Supply
  - 1.8V device(K9F6408Q0C) : 1.70~1.95V
  - 3.3V device(K9F6408U0C) : 2.7 ~ 3.6 V
· Organization
  - Memory Cell Array : (8M + 256K)bit x 8bit
  - Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (8K + 256)Byte
· 528-Byte Page Read Operation
  - Random Access : 10ms(Max.)
  - Serial Page Access
  - 1.8V device(K9F6408Q0C) : 50ns
  - 3.3V device(K9F6408U0C) : 50ns
· Fast Write Cycle Time
  - Program Time
  - 1.8V device(K9F6408Q0C) : 200ms(Typ.)
  - 3.3V device(K9F6408U0C) : 200ms(Typ.)
  - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
  - Endurance : 100K Program/Erase Cycles
  - Data Retention : 10 Years
· Command Register Operation
· Package
  - K9F6408U0C-TCB0/TIB0 :     44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
  - K9F6408Q0C-BCB0/BIB0 48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
  - K9F6408U0C-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)
  - K9F6408U0C-QCB0/QIB0 : Pb-free Package 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
  - K9F6408Q0C-HCB0/HIB0 : Pb-free Package 48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
  - K9F6408U0C-FCB0/FIB0 : Pb-free Package 48 - Pin WSOP I (12X17X0.7mm)
* K9F6408U0C-V,F(WSOPI ) is the same device as K9F6408U0C-T,Q(TSOPII) except package type.

K9F6408U0C Connection Diagram

K9F6408U0C  Connection Diagram

K9F6408U0C datasheet

K9F6408U0C
PDF/DataSheet Download

  • Datasheet: K9F6408U0C
  • File Size: 803034 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
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