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Part Number: K9S5608V0C

 

 

 

 

Description: Using Nand flash memory, SmartMedia provides the most costeffectivesolution for the solid state mass s...


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K9S5608V0C General Description


Using Nand flash memory, SmartMedia provides the most costeffectivesolution for the solid state mass storage market. A programperation is implemented by the single page of 528 bytesin typical 200s and an erase operation is done by the singleblock of 16K bytes (K9S6408V0X: 8K bytes) in typical 2ms.Data in a page can be read out at 50ns cycle time per byte. TheI/O pins serve as ports for address and data inputs/outputs aswell as command inputs. The on-chip writing controller automatesall program and erase functions including pulse repetition,where required, and internal verification and margining ofdata. Even the write-intensive systems can take advantage ofthe SmartMeida¢s extended reliability of 100K program/erasecycles by providing ECC(Error Correcting Code) with real time apping-out algorithm. (*Endurance varies according to its ensity. please refer to Features). SmartMedia is an optimum olution for data storage applications such as solid state file torage, digital voice recorder, digital still camera and other portable pplications requiring non-volatility.

K9S5608V0C Maximum Ratings

Parameter Symbol
Rating
Unit
Voltage on any pin relative to VSS VIN
-0.6 to + 4.6
V
VCC -0.6 to + 4.6
Temperature Under Bias TBIAS
-10 to +65
Storage Temperature TSTG
-20 to +65
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions s detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9S5608V0C Features

•Single 2.7V~3.6V Supply
•Organization
   - Memory Cell Array :
      8MB(K9S6408V0X) : ( 8M + 256K)bit x 8bit
      16MB(K9S2808V0X) : (16M + 512K)bit x 8bit
      32MB(K9S5608V0X) : (32M + 1,024K)bit x 8bit
   - Data Register : (512 + 16)bit x8bit
•Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase
     32MB, 16MB(K9S56/2808V0X) : (16K + 512)Byte
     8MB(K9S6408V0X) : (8K + 256)Byte
•528-Byte Page Read Operation
   - Random Access : 10ms(Max.)
   * K9S6408V0B/A : 7ms(Max.)
   * K9S6408V0C : 10ms(Max.)
   - Serial Page Access : 50ns(Min.)
•Fast Write Cycle Time
   - Program Time : 200ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
•Command/Address/Data Multiplexed I/O Port
•Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
•Reliable CMOS Floating   -Gate Technology
   - Endurance : 100K Program/Erase Cycles
   * K9S6408V0X : 1Million Program/Erase Cycles
   - Data Retention : 10 years
•Command Register Operation
•22pad SmartMediaTM(SSFDC)
•Unique ID for Copyright Protection

K9S5608V0C datasheet

K9S5608V0C
PDF/DataSheet Download

  • Datasheet: K9S5608V0C
  • File Size: 493216 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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