Features: • Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25s(Max.)
- Serial Access : 25ns(Min.)
• K9NBG08U5A : 50ns(Min.)
• Fast Write Cycle Time
- Page Program time : 200s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9K8G08U0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-ICB0/IIB0 52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9NBG08U5A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)Pinout
Specifications
| Parameter |
Symbol |
Rating |
Unit |
| Voltage on any pin relative to VSS |
VCC |
-0.6 to +4.6 |
V |
| VIN |
-0.6 to +4.6 |
| VI/O |
-0.6 to Vcc+0.3 (<4.6V) |
| Temperature Under Bias |
K9XXG08UXA-XCB0 |
TBIAS |
-10 to +125 |
°C |
| K9XXG08UXA-XIB0 |
-40 to +125 |
| Storage Temperature |
K9XXG08UXA-XCB0 |
TSTG |
-65 to +150 |
°C |
| K9XXG08UXA-XIB0 |
| Short Circuit Current |
IOS |
5 |
mA |
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DescriptionOffered in 1G x 8bit, the K9XXG08UXA is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5A : 50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9XXG08UXAs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9XXG08UXA is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.
K9XXG08UXA Data Sheet
