KAF-1001E

• Front Illuminated Full-Frame Architecture with Blue Plus Transparent Gate True Two Phase Technology for high sensitivity
• 1024(H) x 1024(V) Photosensitive Pixels
• 24m(H) x 24m(V) Pixel Size
• 24.5 mm x 24.5 mm Photo active Area
• 1:1 Aspect Ratio
• 100% Fill Factor
• Single Readout Register
• 2 Clock Selectable Outputs
• High Gain Output (11 V/e-) for low noise
• Low Gain Output (2.0 V/e-) for high dynamic range
• Low Dark Current (<30 pA/cm² @ T=25^oC)

The KAF-1001E is a high-performance, silicon charge-coupled device (CCD) designed for a wide range of image sensing applications in the 0.4mm to 1.1mm wavelength band. Common applications include medical, scientific, military, machine and industrial vision.

The sensor KAF-1001E is built with a true two-phase CCD technology employing a transparent gate. This technology simplifies the support circuits that drive the sensor and reduces the dark current without compromising charge capacity. The transparent gate results in spectral response increased ten times at 400nm, compared to a front side illuminated standard polysilicon gate technology. The sensitivity is increased 50% over the rest of the visible wavelengths.

The clock selectable on-chip output amplifiers KAF-1001E have been specially designed to meet two different needs. The first is a high sensitivity 2-stage output with 11V/e- charge to voltage conversion ratio. The second is a single-stage output with 2V/e- charge to voltage conversion ratio.