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KB847

Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.Compact dual-in-line packageKB847:4-channel type3.Recognized by UL and CUL, file NO.E225308.4.Approved by VDE 0884 Teil2(NO:40006364)(Creepage distance between input and output:7mm or more).5.RoHS Compliant.Application1...

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KB847: Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.Compact dual-in-line packageKB847:4-channel type3.Recognized by UL and CUL, file NO.E225308.4.Approved by VDE 0884 Teil...

KB847 Data Sheet

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Part Number:
KB847
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

1.High isolation voltage between input and output (Viso=5000 Vrms).
2.Compact dual-in-line package
KB847:4-channel type
3.Recognized by UL and CUL, file NO.E225308.
4.Approved by VDE 0884 Teil2(NO:40006364)
(Creepage distance between input and output:7mm or more).
5.RoHS Compliant.


Application

1.Computer terminals.
2.Registers,copiers,automatic vending machines.
3.System appliances, measuring instruments.
4.Programmable logic controller.
5.Signal transmission between circuits of different potentials and impedances.


Specifications

Parameter
Symbol
Rating
Unit
Input Forward current
IF
50
mA
Reverse Voltage
VR
6
V
Power dissipation
P
70
mW
Output Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
6
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Total power dissipation
Ptot
200
mW
*1Isolation voltage
Viso
5000
Vrms
Operating temperature
Topr
-30~+100
Storage temperature
Tstg
-55~+125
*2Soldering temperature
Tsol
260



Description

1.The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and
an NPN silicon phototransistor.
2.The lead pitch is 2.54mm.
3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.


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