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KHB4D0N65P

Features: `VDSS=650V, ID=4A`Drain-Source ON Resistance: RDS(ON)=3.0 @VGS = 10V`Qg(typ.)=20nCSpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V ID Drain Current @TC=25 4.0 A IDP Pulsed (Note1) 16 A VGGS Gate-to-Source Voltage ±30 V ...

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KHB4D0N65P: Features: `VDSS=650V, ID=4A`Drain-Source ON Resistance: RDS(ON)=3.0 @VGS = 10V`Qg(typ.)=20nCSpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V ID Dr...

KHB4D0N65P Data Sheet

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Part Number:
KHB4D0N65P
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

`VDSS=650V, ID=4A
`Drain-Source ON Resistance
: RDS(ON)=3.0 @VGS = 10V
`Qg(typ.)=20nC


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
ID Drain Current @TC=25 4.0 A
IDP Pulsed (Note1) 16 A
VGGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy
(Note 2)		 260 mJ
EAR Repetitive Avalanche Energy
(Note 1)		 10.6 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)		 4.5 V/ns
PD Drain Power
Dissipation		 Tc=25 106
0.85		 W
W/
Derate above25
TJ Maximum Junction Temperature 150
Tstg Storage Temperature Range -55 150
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB4D0N65P has better characteristics, such as fast witching time, low on resistance, low gate charge and excellent valanche characteristics. KHB4D0N65P is mainly suitable for switch mode power upplies.




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