Position: Home  > All Categories> Integrated Circuits (ICs) > KHB4D0N80F2

KHB4D0N80F2

Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB4D0N80P1 KHB4D0N80F1KHB4D0N80F2 Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS 30 V Drain Cu...

product image

KHB4D0N80F2 Picture
See larger image
SeekIC No. : 004385347 Detail

KHB4D0N80F2: Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB4D0N80P1 KHB4D0N80F1KHB4D0N80...

KHB4D0N80F2 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KHB4D0N80F2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`VDSS=800V, ID=4A
`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V
`Qg(typ.)=25nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB4D0N80P1
KHB4D0N80F1
KHB4D0N80F2
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
30
V
Drain Current @TC=25
ID
4.0
4.0*
A
Pulsed (Note1)
IDP
16
16*
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
460
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
13
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.0
V/ns
Drain Power
Dissipation		 Tc=25
PD
130
43
W
Derate above25
1.04
0.34
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.96
2.9
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB4D0N80F2 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB4D0N80F2 is mainly suitable for electronic ballast and switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Test Equipment
TOP853
TOP2005
Memory Cards, Modules
WT32
VTL5C7
Audio Products
HUC1002
WM-64CT
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more