KHB4D5N60P

Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 600±30 VV Drain Current @Tc=...

product image

KHB4D5N60P Picture
SeekIC No. : 004385349 Detail

KHB4D5N60P: Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D...

floor Price/Ceiling Price

Part Number:
KHB4D5N60P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

VDSS(Min.)= 600V, ID= 4.5A
Drain-Source ON Resistance :
RDS(ON)=2.5 @VGS =10V
Qg(typ.) =17nC



Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB9D5N20P1
KHB9D5N20F1
KHB9D5N20F2
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
600

±30
V

V
Drain Current @Tc=25
@Tc=25

Pulsed(Note1)
ID


IDP
4.5
2.8

18
4.5*
2.8*

18*
A
Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
EAS

EAR

dv/dt
260

10.6

4.5
mJ

mJ

V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
106
0.85
36
0.29
W
W/
Maximum Junction Temperature

Storage Temperature Range
Tj

Tstg
150

-55 150


Thermal Characteristics
Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to- Ambient
RthJC


RthCS

RthJA
1.44

0.5

62.5
3.13

-

62.5
/W

/W

/W

* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB4D5N60P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB4D5N60P is mainly suitable for switching mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Potentiometers, Variable Resistors
Test Equipment
Circuit Protection
Tapes, Adhesives
803
View more