KI2305DS

Features: P-Channel 1.25-W, 1.8-V (G-S) MOSFET.PinoutSpecifications Parameter Symbol Rating Unit Drain-source voltage VDS -8 V Gate-source voltage VGS ±8 V Continuous drain current (TJ = 150 ) TA=25 TA=70 ID ±3.5±2.8 A Pulsed drain current ID...

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SeekIC No. : 004385400 Detail

KI2305DS: Features: P-Channel 1.25-W, 1.8-V (G-S) MOSFET.PinoutSpecifications Parameter Symbol Rating Unit Drain-source voltage VDS -8 V Gate-source voltage VGS ±8 V C...

floor Price/Ceiling Price

Part Number:
KI2305DS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

P-Channel 1.25-W, 1.8-V (G-S) MOSFET.


Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Drain-source voltage
VDS
-8
V
Gate-source voltage
VGS
±8
V
Continuous drain current (TJ = 150 ) TA=25
TA=70
ID
±3.5
±2.8
A
Pulsed drain current
IDM
±12
A
Continuous source current (diode conduction) *
IS
-1.6
A
Power dissipation * TA=25
TA=70
PD
1.25
0.8
W
Operating junction and storage temperature range
Tj,Tstg
-55 to +150
Junction-to-ambient * t 5 sec
Steady State
RthJA
100
130
/W



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