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KI4923DY

Features: ·TrenchFET Power MOSFETS·Advanced High Cell Density ProcessSpecifications Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current(TJ=150 )* TA=25 ID -8.3-6.6 -6.2-5 A TA=70 Pulsed D...

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SeekIC No. : 004385435 Detail

KI4923DY: Features: ·TrenchFET Power MOSFETS·Advanced High Cell Density ProcessSpecifications Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS...

KI4923DY Data Sheet

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Part Number:
KI4923DY
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

·TrenchFET Power MOSFETS
·Advanced High Cell Density Process


Specifications

Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current(TJ=150 )*
TA=25 ID -8.3
-6.6		 -6.2
-5		 A
TA=70
Pulsed Drain Current IDM -30
Continuous Source Current* IS -1.7 -0.9
Power Dissipation *
TA=25 PD 2 1.1 W
TA=70 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
Parameter Symbol Typ Max Unit
Maximum Junction-to-Ambient* t10 sec RthJA 45 62.5 °C/W
Steady-State 85 110
Maximum Junction-to-Foot (Drain) Steady-State RthJF 26 35
* Surface Mounted on 1" X 1' FR4 Board.


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