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MFG:SAMSUNG  Package Cooled:TSOP40  

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Part Number: KM29U64000T

 

MFG: SAMSUNG

Package Cooled: TSOP40

 

Description: The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cel...


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KM29U64000T General Description


The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation can be performed in typically 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the KM29U64000¢s extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correcting Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by systemlevel ECC.

The KM29U64000 is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.

KM29U64000T Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on any pinrelative to VSS
VIN
-0.6 to +6.0
V
VCC
-0.6 to +4.6
v
VCCQ
-0.6 to +6.0
v
Temperature Under Bias KM29U64000T
TBIAS
-10 to + 125
KM29U64000IT
-40 to + 125
Storage Temperature
TSTG
-65 to + 150
Short Circuit Output Current
IOS
5
mA

 

 

 

KM29U64000T Features

· Voltage Supply : 2.7V ~ 3.6V
· Organization
  - Memory Cell Array : (8M + 256K)bit x 8bit
  - Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (8K + 256)Byte
· 528-Byte Page Read Operation
  - Random Access : 7ms(Max.)
  - Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
  - Program time : 200ms(typ.)
  - Block Erase time : 2ms(typ.)
· Command/Address/Data Multiplexed I/O port
· Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
  - Endurance : 1M Program/Erase Cycles
  - Data Retention : 10 years
· Command Register Operation
· 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)

KM29U64000T Connection Diagram

KM29U64000T  Connection Diagram

KM29U64000T datasheet

KM29U64000T
PDF/DataSheet Download

  • Datasheet: KM29U64000T
  • File Size: 492941 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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