KM29U64000T General Description
KM29U64000T Maximum Ratings
KM29U64000T Features
· Voltage Supply : 2.7V ~ 3.6V
· Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
· 528-Byte Page Read Operation
- Random Access : 7ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(typ.)
- Block Erase time : 2ms(typ.)
· Command/Address/Data Multiplexed I/O port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
· Command Register Operation
· 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
KM29U64000T Connection Diagram
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All