KM29U128T General Description
KM29U128T Maximum Ratings
KM29U128T Features
· Voltage supply : 2.7V~3.6V
· Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
· 528-Byte Page Read Operation
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(typ.)
- Block Erase time : 2ms(typ.)
· Command/Address/Data Multiplexed I/O port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
· Command Register Operation
· Package : 48 - pin TSOP Type1 - 12 x 20 / 0.5 mm pitch
KM29U128T Connection Diagram
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All