KM29W040AT

Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Erase : 4K Byte in 6ms· 32-Byte Frame Read Operation - Random Access : 15ms(Max.) - Serial Frame Access ...

product image

KM29W040AT Picture
SeekIC No. : 004386015 Detail

KM29W040AT: Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Eras...

floor Price/Ceiling Price

Part Number:
KM29W040AT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Voltage Supply: 3.0V~5.5V
· Organization
   - Memory Cell Array : 512K x 8
   - Data Register : 32 x 8 bit
· Automatic Program and Erase (Typical)
   - Frame Program : 32 Byte in 500ms
   - Block Erase : 4K Byte in 6ms
· 32-Byte Frame Read Operation
   - Random Access : 15ms(Max.)
   - Serial Frame Access : 120ns(Min.)
· Command/Address/Data Multiplexed I/O port
· Low Operation Current (Typical)
   - 10mA Standby Current
   - 10mA Read/ Program/Erase Current
· Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
· 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN
-0.6 to +7.0
V
Temperature Under Bias KM29W040AT
TBIAS
-10 to +125
KM29W040AIT
-40 to +125
Storage Temperature
TSTG
-65 to +150
Short Circuit Output Current
IOS
5
mA



Description

The KM29W040A is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typically 500ms and an Erase operation erase a 4K-byte block in typically 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The on-chip write controller automates the program and erase operations, including program or erase pulse   repetition where required, and performs internal verification of cell data.

The KM29W040A is an optimum solution for flash memory application that do not require the high performance levels or capacity of larger density flash memories. These application include data storage in digital Telephone Answering  evices(TAD) and other consumer applications that require voice data storage.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Potentiometers, Variable Resistors
Tapes, Adhesives
803
Connectors, Interconnects
Sensors, Transducers
View more