Purchase KM4132G271A, In-stock KM4132G271A From SeekIC.
Part Number: KM4132G271A
Description: The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized ...
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KM4132G271A
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DataSheet
General Description
KM4132G271A General Description
The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length, and programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Write per bit and 8 columns block write improves performance in graphics systems.
KM4132G271A Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
| Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
| Storage temperature |
TSTG |
-55 ~ +150 |
- - |
| Power dissipation |
PD |
1 |
W |
| Short circuit current |
IOS |
50 |
mA |
KM4132G271A Features
· JEDEC standard 3.3V power supply
· LVTTL compatible with multiplexed address
· Dual bank / Pulse RAS
· MRS cycle with address key programs
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
· All inputs are sampled at the positive going edge of the system clock
· Burst Read Single-bit Write operation
· DQM 0-3 for byte masking
· Auto & self refresh
· 16ms refresh period (1K cycle)
· 100 Pin QFP
KM4132G271A Connection Diagram
KM4132G271A
PDF/DataSheet Download
- Datasheet: KM4132G271A
- File Size: 1024306 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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