KM416C1200BJ-L5

The KM416C1200BJ-L5 is a kind of 1,048,576 x 16 bit fast page mode CMOS DRAM. It is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. Fast page mode offers high speed random access of memory cells within the same row. KM416C1200BJ-L5 is widely used as graphic memory unit for microcomputer, personal computer and portable machines.

There are some features of KM416C1200BJ-L5 as follows. (1) 5 V power supply voltage, 1 K refresh cycle; (2) fast page mode operation; (3) 2 CAS byte/word read/write operation; (4) CAS-before-RAS refresh capability; (5) RAS-only and hidden refresh capability; (6) self-refresh capability (L-ver only); (7) TTL(5 V) compatible inputs and outputs; (8) early write or output enable controlled write; (9) JEDEC standard pinout; (10) available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages; (11) single +5 V±10% power supply (5 V product).

The following is about the absolute maximum ratings of KM416C1200BJ-L5. (1): VIN,VOUT (voltage on any pin relative to VSS) is from -1.0 to +7.0 V; (2): VCC (voltage on VCC supply relative to VSS) is from -1.0 to +7.0 V; (3): PD (power dissipation) is 1 W; (4): IOS (short circuit output current) is 50 mA; (5) TSTG (storage temperature) is from -55 to +150.

The last one is about the recommended operating conditions of KM416C1200BJ-L5 (voltage referenced to Vss, TA=0 to 70). (1): the minimum VCC (supply voltage) is 4.5 V, the typical is 5.0 V and the maximum is 5.5 V; (2): the VSS (GND) is 0 V; (3): the minimum VIH (input high voltage) is 2.4 V and the maximum is VCC+1.0 V; (4): the minimum VIL (input low voltage) is -1.0 V and the maximum is 0.8 V.