KM416C1200BJ-L5

The KM416C1200BJ-L5 is a kind of 1,048,576 x 16 bit fast page mode CMOS DRAM. It is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. Fast page mode offers high speed random access of memory cells within the same row. It is widely used as graphic memory unit for microcomputer, personal computer and portable machines.

There are some features as follows. (1) 5 V power supply voltage, 1 K refresh cycle; (2) fast page mode operation; (3) 2 CAS byte/word read/write operation; (4) CAS-before-RAS refresh capability; (5) RAS-only and hidden refresh capability; (6) self-refresh capability (L-ver only); (7) TTL(5 V) compatible inputs and outputs; (8) early write or output enable controlled write; (9) JEDEC standard pinout; (10) available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
400mil packages; (11) single +5 V±10% power supply (5 V product).

The following is about the absolute maximum ratings. (1): VIN,VOUT (voltage on any pin relative to VSS) is from -1.0 to +7.0 V; (2): VCC (voltage on VCC supply relative to VSS) is from -1.0 to +7.0 V; (3): PD (power dissipation) is 1 W; (4): IOS (short circuit output current) is 50 mA; (5) TSTG (storage temperature) is from -55 to +150.

The last one is about the recommended operating conditions (voltage referenced to Vss, TA=0 to 70). (1): the minimum VCC (supply voltage) is 4.5 V, the typical is 5.0 V and the maximum is 5.5 V; (2): the VSS (GND) is 0 V; (3): the minimum VIH (input high voltage) is 2.4 V and the maximum is VCC+1.0 V; (4): the minimum VIL (input low voltage) is -1.0 V and the maximum is 0.8 V.