KM44C256B

The KM44C256B is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mainframes and mini computers, graphics and high performance microprocessor systems. Besides, the device is fabricated using Samsung's advanced silicon gate CMOS process.

There are some features as follows: (1)fast page mode capability; (2)CAS-before-RAS refresh capability; (3)RAS-only and hidden refresh capability; (4)TTL compatible inputs and outputs; (5)early write or output enable controlled write; (6)single +5 V±10% power supply; (7)512cycle/8ms refresh; (8)JEDEC standard pinout; (9)available in plastic DIP, SOJ and ZIP.

The following is about the maximum ratings: (1)voltage on any pin relative to VSS, VIN or VOUT: -1 to +7.0 V; (2)voltage on VCC supply relative to VSS, VCC: -1 to +7.0 V; (3)storage temperature, Tstg: -55 to +150; (4)power dissipation, PD: 600 mW; (5)short circuit output current, IOS: 50 mA.