KM611001

• Fast Access Time 20, 25, 35ns(Max.)
• Low Power Dissipation
   -Standby (TTL) : 40 mA(Max.)
                (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver.
   -Operating KM611001/L -20 : 130 mA(Max.)
                     KM611001/L -25 : 110 mA(Max.)
                     KM611001/L -35 : 100 mA(Max.)
• Single 5.0V ± 10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
   - No Clock or Refresh required
• Three State Outputs
• Low Data Retention Voltage : 2V(Min.)- L-Ver Only
• Standard Pin Configuration
   -KM611001P/LP : 28-DIP-400
   -KM611001J/LJ : 28-SOJ-400A

The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated using Samsung`s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in highdensity high-speed system applications. The KM611001/L is packaged in a 400 mil 28-pin plastic DIP or SOJ.