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Part Number: KM611001
Description: The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words ...
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KM611001
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DataSheet
General Description
KM611001 General Description
The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated using Samsung`s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in highdensity high-speed system applications. The KM611001/L is packaged in a 400 mil 28-pin plastic DIP or SOJ.
KM611001 Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
| Voltage on Any Pin Relative to Vss |
VIN,OUT |
- 0.5 to 7.0 |
V |
| Voltage on Vcc Supply Relative to Vss |
VCC |
- 0.5 to 7.0 |
V |
| Power Dissipation |
PD |
1.0 |
W |
| Storage Temperature |
Tstg |
- 65 to 150 |
|
| Operating Temperature |
TA |
0 to 70 |
KM611001 Features
• Fast Access Time 20, 25, 35ns(Max.)
• Low Power Dissipation
-Standby (TTL) : 40 mA(Max.)
(CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver.
-Operating KM611001/L -20 : 130 mA(Max.)
KM611001/L -25 : 110 mA(Max.)
KM611001/L -35 : 100 mA(Max.)
• Single 5.0V ± 10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Low Data Retention Voltage : 2V(Min.)- L-Ver Only
• Standard Pin Configuration
-KM611001P/LP : 28-DIP-400
-KM611001J/LJ : 28-SOJ-400A
KM611001 Connection Diagram
KM611001
PDF/DataSheet Download
- Datasheet: KM611001
- File Size: 98168 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
- ·KM611001L
- SAMSUNG [Samsung semiconductor]
- 1M x 1Bit High-Speed CMOS SRAM
- 98168 KB
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