MFG:Other Category:Other
Category: Other
MFG: Other
Description: The KM6161002CLI-12 is designed as one kind of 134,217,728 bits synchronous high data rate Dynamic RAM that is organized ...
The KM6161002CLI-12 is designed as one kind of 134,217,728 bits synchronous high data rate Dynamic RAM that is organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features of the KM6161002CLI-12 are:(1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (2 & 3) and Burst length (1, 2, 4, 8 & Full page) and Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto & self refresh; (9)64ms refresh period (4K cycle).
The absolute maximum ratings of the KM6161002CLI-12 can be summarized as:(1)Voltage on any pin relative to Vss: -1.0 to 4.6 V;(2)Voltage on VDD supply relative to Vss: -1.0 to 4.6 V;(3)Storage temperature: -55 to +150 °C;(4)Power dissipation: 1 W;(5)Short circuit current: 50 mA. If you want to know more information such as the electrical characteristics about the KM6161002CLI-12, please download the datasheet in www.seekic.com or www.chinaicmart.com.
KM6161002CLI-12
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The KM6161002C is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cy...
The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Als...
The KM6161002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The KM6161002B uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Als...
The KM6161002A is a kind of 1,048,576-bit high speed static random access memory organized as 65,536 words by 16 bits. The KM6161002A uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cy...
The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated using Samsung`s advanced CMOS process ...
The KM611001/L is a 1,048,576-bit high-speed Static Random Access Memory organized as 1,048,576 words by 1 bit. The KM611001/L has separate input and output lines for fast read and write access. The device is fabricated using Samsung`s advanced CMOS process ...
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