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Part Number: KM68V257E

 

 

 

 

Description: The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 b...


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KM68V257E General Description


The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68V257E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.

KM68V257E Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to 4.6
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 4.6
V
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature Commercial
TA
0 to 70
°C
Industrial
TA
-40 to 85
°C

KM68V257E Features

• Fast Access Time 12,15,20ns(Max.)
• Low Power Dissipation
           Standby (TTL) : 20mA(Max.)
                         (CMOS) : 2.0mA(Max.)
                                    0.5mA(Max.) L-ver. only
           Operating KM68V257E - 12 : 70mA(Max.)
                            KM68V257E - 15 : 70mA(Max.)
                            KM68V257E - 20 : 70mA(Max.)
• Single 3.3 ±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
   - No Clock or Refresh required
• Three State Outputs
• Standard Pin Configuration
                   KM68V257EJ : 28-SOJ-300
                   KM68V257ETG : 28-TSOP1-0813, 4F

KM68V257E Connection Diagram

KM68V257E  Connection Diagram

KM68V257E datasheet

KM68V257E
PDF/DataSheet Download

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