Purchase KM718FV4021, In-stock KM718FV4021 From SeekIC.


Part Number: KM718FV4021
Description: The KM718FV4021 and KM718FV4021 are 4,718,592 bit Synchronous Pipeline Mode SRAM. It is organized as 1...


Description: The KM718FV4021 and KM718FV4021 are 4,718,592 bit Synchronous Pipeline Mode SRAM. It is organized as 1...
The KM718FV4021 and KM718FV4021 are 4,718,592 bit Synchronous Pipeline Mode SRAM. It is organized as 131,072words of 36 bits(or 262, 144 words of 18 bits)and is implemented in SAMSUNG¢s advanced CMOS technology.
Single differential PECL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally. Data outs are updated from output registers edge of the next rising edge of the K clock. An internal write data buffer allows write data to follow one cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch.
|
PARAMETER |
SYMBOL |
RATING |
UNIT |
Note |
| Core Supply Voltage Relative to VSS |
VDD |
-0.5 to 3.9 |
V |
|
| Output Supply Voltage Relative to VSS |
VDDQ |
VDD |
V |
|
| Voltage on any I/O pin Relative to VSS |
VTERM |
-0.5 to VDD+0.5 |
V |
|
| Maximum Power Dissipation |
PD |
3 |
W |
|
| Output Short-Circuit Current |
IOUT |
25 |
mA |
|
| Operating Temperature |
TOPR |
0 to 70 |
||
| Storage Temperature |
TSTG |
-55 to 125 |
KM718FV4021
PDF/DataSheet Download








