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KMDF2C03HD

Features: ·Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life·Logic Level Gate Drive ? Can Be Driven by Logic ICs·Diode Is Characterized for Use In Bridge Circuits·Diode Exhibits High Speed, With Soft Recovery·IDSS Specified at Elevated Temperature·Avalanche Energy SpecifiedPino...

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SeekIC No. : 004386290 Detail

KMDF2C03HD: Features: ·Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life·Logic Level Gate Drive ? Can Be Driven by Logic ICs·Diode Is Characterized for Use In Bridge Circuits·Diode Exhibits ...

KMDF2C03HD Data Sheet

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Part Number:
KMDF2C03HD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
·Logic Level Gate Drive ? Can Be Driven by Logic ICs
·Diode Is Characterized for Use In Bridge Circuits
·Diode Exhibits High Speed, With Soft Recovery
·IDSS Specified at Elevated Temperature
·Avalanche Energy Specified




Pinout

Connection Diagram




Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain current Continuous
ID
4.1
3
A
Pulsed Drain Current
IDM
21
15
A
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Total power dissipation
PD
2
W
Thermal Resistance ? Junction to Ambient
RJA
62.5
/W
Single Pulse Drain?to?Source Avalanche
Energy - Starting TJ = 25
EAS
324 *2
324 *3
mJ
*1 Pw 10 s, Duty cycle 1%
*2 VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0,Apk, L = 8.0 mH, RG = 25
*3 VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0,Apk, L = 18 mH, RG = 25




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