KP-1608

Features: ·l1.6mmx0.8mm SMT LED. 0.75mm THICKNESS.·lLOW POWER CONSUMPTION.·lWIDE VIEWING ANGLE.·lIDEAL FOR BACKLIGHT AND INDICATOR.·lVARIOUS COLORS AND LENS TYPES AVAILABLE.Specifications Parameter BrightRed HighEfficiencyRed Yellow SuperBrightRed SuperBrightGreen SuperBri...

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KP-1608 Picture
SeekIC No. : 004386538 Detail

KP-1608: Features: ·l1.6mmx0.8mm SMT LED. 0.75mm THICKNESS.·lLOW POWER CONSUMPTION.·lWIDE VIEWING ANGLE.·lIDEAL FOR BACKLIGHT AND INDICATOR.·lVARIOUS COLORS AND LENS TYPES AVAILABLE.Specifications Par...

floor Price/Ceiling Price

Part Number:
KP-1608
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/22

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Product Details

Description



Features:

·l1.6mmx0.8mm SMT LED. 0.75mm THICKNESS.
·lLOW POWER CONSUMPTION.
·lWIDE VIEWING ANGLE.
·lIDEAL FOR BACKLIGHT AND INDICATOR.
·lVARIOUS COLORS AND LENS TYPES AVAILABLE.



Specifications

Parameter
Bright
Red
High
Efficiency
Red
Yellow
Super
Bright
Red
Super
Bright
Green
Super
Bright
Yellow
Units
Power dissipation
105
105
105
100
105
125
mW
DC Forward Current
25
30
30
30
25
25
mA
Peak Forward Current [1]
150
150
150
150
150
150
mA
Reverse Voltage
5
5
5
5
5
5
V
Operating/Storage Temperature
-40 To +85

Note:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.



Description

The KP-1608 Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode.

The KP-1608 Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode.

The KP-1608 High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.

The KP-1608 Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.

The KP-1608 Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diodes.

The KP-1608 Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.




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