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KPA1758

Features: `Dual MOS FET chips in small package`2.5 V gate drive type low on-state resistanceRDS(on)1= 30 (MAX.) (VGS = 4.5 V, ID = 3.0 A)RDS(on)2 = 40 (MAX.) (VGS = 2.5 V, ID = 3.0 A)`Low Ciss : Ciss = 1100 pF (TYP.)`Built-in G-S protection diode`Small and surface mount packageSpecifications ...

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SeekIC No. : 004386578 Detail

KPA1758: Features: `Dual MOS FET chips in small package`2.5 V gate drive type low on-state resistanceRDS(on)1= 30 (MAX.) (VGS = 4.5 V, ID = 3.0 A)RDS(on)2 = 40 (MAX.) (VGS = 2.5 V, ID = 3.0 A)`Low Ciss : C...

KPA1758 Data Sheet

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Part Number:
KPA1758
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Dual MOS FET chips in small package
`2.5 V gate drive type low on-state resistance
RDS(on)1= 30 (MAX.) (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 (MAX.) (VGS = 2.5 V, ID = 3.0 A)
`Low Ciss : Ciss = 1100 pF (TYP.)
`Built-in G-S protection diode
`Small and surface mount package


Specifications

Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
Gate to Source Voltage (VDS = 0)
Drain Current (DC)
Drain Current (Pulse) *1
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 unit) *2
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
30
±12.0
±6.0
±24
1.7
2.0
150
-55 to + 150
V
V
A
A
W
W




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