KPA1764

Features: Dual chip typeLow on-state resistanceRDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A)RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A)RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A)Low input capacitanceCiss = 1300 pF TYP.Built-in G-S protection diodeSmall and surface mount packageSpecifications...

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SeekIC No. : 004386579 Detail

KPA1764: Features: Dual chip typeLow on-state resistanceRDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A)RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A)RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A)Low input capa...

floor Price/Ceiling Price

Part Number:
KPA1764
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

Dual chip type
Low on-state resistance
RDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A)
RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A)
Low input capacitance
Ciss = 1300 pF TYP.
Built-in G-S protection diode
Small and surface mount package



Specifications

Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
60
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±7
A
Drain Current (Pulse) *1
ID(pulse)
±28
A
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation(2 unit) *2
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
Single Avalanche Current *3
IAS
7
A
Single Avalanche Energy *3
EAS
98
mJ
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm
*3 Starting Tch= 25 , VDD = 30 V, RG = 25 , VGS = 20 0 V



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