Features: `High emitter-base voltage : VEBO=25V(Min)`High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)`Low on resistance : Ron=1 (Typ.) (IB=5mA)`With Built-in Bias Resistors.`Simplify Circuit Design.`Reduce a Quantity of Parts and Manufacturing Process.Specifications CHARACTERISTI...
KRC884T: Features: `High emitter-base voltage : VEBO=25V(Min)`High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)`Low on resistance : Ron=1 (Typ.) (IB=5mA)`With Built-in Bias Resistors.`Simplify Circ...
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|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT |
| Collector-Base Voltage |
VCBO |
50 |
V |
| Collector-Emitter Voltage |
VCEO |
20 |
V |
| Emitter-Base Voltage |
VEBO |
25 |
V |
| Collector Current |
IC |
300 |
mA |
| Collector Power Dissipation |
PC* |
0.9 |
mW |
| Junction Temperature |
Tj |
150 |
|
| Storage Temperature Range |
Tstg |
-55~150 |