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KRF7309

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Parameter Symbol N-Channel P-Channel Unit 10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25 ID 4.7 -3.5 A...

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SeekIC No. : 004387358 Detail

KRF7309: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Parameter Sy...

KRF7309 Data Sheet

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Part Number:
KRF7309
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel Mosfet
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching




Specifications

Parameter Symbol N-Channel P-Channel Unit
10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25 ID 4.7 -3.5 A
Continuous Drain Current VGS @ 10V Ta = 25 ID 4.0 -3.0
Continuous Drain Current VGS @ 10V Ta = 70 ID 3.2 -2.4
Pulsed Drain Current*1 IDM 16 -12
Power Dissipation @Ta= 25 *3 PD 1.4 W
Linear Derating Factor (PCB Mount)*4 0.011 mJ
Peak Diode Recovery dv/dt *2 dv/dt 6.9 -6.0 V/ ns
Gate-to-Source Voltage VGS ±20 V
Junction and Storage Temperature Range TJ, TSTG -55 to + 150
Junction-to-Amb. (PCB Mount, steady state)*4 RJA 90 /W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.4A, di/dt 73A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.8A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Pulse width 300s; duty cycle 2%.
*4 When mounted on 1" square PCB (FR-4 or G-10 Material).




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