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KRF7338

Features: ·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Available in Tape & ReelSpecifications Parameter Symbol N-Channel P-Channel Unit Drain to Source Voltage VDSS 12 -12 V Continuous Drain Current,VGS@10V , Ta = 25 VGS 6.3 ...

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SeekIC No. : 004387363 Detail

KRF7338: Features: ·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Available in Tape & ReelSpecifications Parameter Symbol N-Channel P-Channel Unit Drain to Sou...

KRF7338 Data Sheet

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Part Number:
KRF7338
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Available in Tape & Reel




Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Drain to Source Voltage
VDSS
12
-12
V
Continuous Drain Current,VGS@10V , Ta = 25
VGS
6.3
-3.0
A
Continuous Drain Current ,VGS@10V , Ta = 70
ID
5.2
-2.5
Pulsed Drain Current *1
ID
26
-13
Power Dissipation @Ta= 25 *3
PD
2.0
W
Power Dissipation @Ta= 70 *3
1.3
Linear Derating Factor
16
mV/
Gate-to-Source Voltage
VGS
±12 *4
±8.0
V
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
62.5
/W
Junction-to-Drain Lead
RJL
20
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Pulse width 400 s; duty cycle 2%.
*3 Surface mounted on 1 in square Cu board.
*4 The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device.




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