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KRF7343

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current,VGS@10V , Ta = 25 ID 4.7 -3.4 A Continuous Drain Current,VGS@10V , Ta...

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SeekIC No. : 004387364 Detail

KRF7343: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit C...

KRF7343 Data Sheet

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Part Number:
KRF7343
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Upload time: 2024/4/27

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
Continuous Drain Current,VGS@10V , Ta = 25 ID 4.7 -3.4 A
Continuous Drain Current,VGS@10V , Ta = 70 ID 3.8 -2.7
Pulsed Drain Current*1 IDM 38 -27
Power Dissipation @Ta= 25 *5 PD 2.0 W
Power Dissipation @Ta= 70 *5 1.3 W
Gate-to-Source Voltage VGS ±20 ±20 V
Drain-Source Voltage VDS 55 -55 V
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150
Repetitive Avalanche Energy EAR 0.20 mJ
Junction-to-Ambient*5 RJA 62.5 /W
Peak Diode Recovery dv/dt *2 dv/dt 5.0 -5.0 V/ ns
Single Pulse Avalanche Energy*3 EAS 72 114 mJ
Avalanche Current IAR 4.7 -3.4 A
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 4.7A, di/dt 220A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -3.4A, di/dt -150A/ s, VDD V(BR)DSS, TJ 150
*3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS= 4.7A.
P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A.
*5 Surface mounted on FR-4 board, t 10sec.
*4 Pulse width 300 s; duty cycle 2%.




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