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KRF7389

Features: ·Generation V Technology·Ultra Low On-Resistance·Complimentary Half Bridge·Surface Mount·Fully Avalanche RatedSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Continuous Drain Current Ta = 25 ID 7.3 ...

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SeekIC No. : 004387367 Detail

KRF7389: Features: ·Generation V Technology·Ultra Low On-Resistance·Complimentary Half Bridge·Surface Mount·Fully Avalanche RatedSpecifications Parameter Symbol N-Channel P-Channel Unit ...

KRF7389 Data Sheet

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Part Number:
KRF7389
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Complimentary Half Bridge
·Surface Mount
·Fully Avalanche Rated




Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Continuous Drain Current Ta = 25
ID
7.3
-5.3
A
Continuous Drain Current Ta = 70
ID
5.9
-4.2
Pulsed Drain Current *1
IDM
30
-30
Continuous Source Current (Diode Conduction)
IS
2.5
-2.5
Power Dissipation @Ta= 25
PD
2.5
W
@Ta=70
1.6
Gate-to-Source Voltage
VGS
±20
V
Single Pulse Avalanche Energy
EAS
82
140
mJ
IAR
4.0
-2.8
A
Repetitive Avalanche Energy
EAR
0.20
mJ
Peak Diode Recovery dv/dt *2
dv/dt
3.8
-2.2
V/ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
50
/W

*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD4.0A, di/dt74A/s, VDDV(BR)DSS, TJ150 P-Channel ISD-2.8A, di/dt1500A/s, VDDV(BR)DSS, TJ150
*3 Surface mounted on FR-4 board, t10sec.






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