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KRF7507

Features: Generation V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (<1.1mm)Available in Tape & ReelFast SwitchingPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 ...

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SeekIC No. : 004387371 Detail

KRF7507: Features: Generation V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETVery Small SOIC PackageLow Profile (<1.1mm)Available in Tape & ReelFast SwitchingPinoutSpecifications P...

KRF7507 Data Sheet

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Part Number:
KRF7507
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching




Pinout

Connection Diagram




Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
-20
V
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
2.4
-1.7
A
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
1.9
-1.4
Pulsed Drain Current *1
IDM
21
-14
Power Dissipation @Ta= 25
Power Dissipation @Ta= 70
Linear Derating Factor
PD
1.25
0.8
10
m
W/

Gate-to-Source Voltage
VGS
±12
V
Gate-to-Source Voltage Single Pulse tp<10S
VGSM
16
V
Peak Diode Recovery dv/dt *2
dv/dt
5.0
-5.0
V/ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
100
/W





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