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KRF7530

Features: Trench TechnologyUltra Low On-ResistanceDual N-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Continuous Drain Current, VGS @ -4.5V @ Ta = 2...

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SeekIC No. : 004387373 Detail

KRF7530: Features: Trench TechnologyUltra Low On-ResistanceDual N-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Ratings...

KRF7530 Data Sheet

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Part Number:
KRF7530
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

Trench Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( <1.1mm)
Available in Tape & Reel


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
5.4
A
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
4.3
Pulsed Drain Current *1
IDM
40
Power Dissipation @Ta= 25
Power Dissipation @Ta= 70
Linear Derating Factor
PD
1.3
0.8
10
m
W/

Single Pulse Avalanche Energy *2
EAS
33
mJ
Gate-to-Source Voltage
VGS
±20
mW/
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
100
/W



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