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KRF7555

Features: Trench TechnologyUltra Low On-ResistanceDual P-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Continuous Drain Current, VGS @ 4.5V,Ta = 25 ...

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SeekIC No. : 004387374 Detail

KRF7555: Features: Trench TechnologyUltra Low On-ResistanceDual P-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & ReelPinoutSpecifications Parameter Symbol Rating ...

KRF7555 Data Sheet

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Part Number:
KRF7555
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-20
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
-4.3
A
Continuous Drain Current, VGS @ 4.5V,TA = 70
ID
-34
Pulsed Drain Current*1
IDM
-34
Power Dissipation *2 @TA= 25
Power Dissipation *2 @TA= 70
PD
1.25
0.8
W
W
Linear Derating Factor
10
mW/
Gate-to-Source Voltage
VGS
±20
V
Single Pulse Avalanche Energy*2
EAS
36
Mj
Peak Diode Recovery dv/dt*3
dv/dt
1.1
V/ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Junction-to-Ambient *2
RJA
70
/W



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