Purchase KRF9952, In-stock KRF9952 From SeekIC.
- Table of contents:
KRF9952
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Suppliers
DataSheet
General Description
KRF9952 Maximum Ratings
| Parameter | Symbol | N-Channel | P-Channel | Unit |
| Continuous Drain Current,VGS@10V , Ta = 25 | ID | 3.5 | -2.3 | A |
| Continuous Drain Current,VGS@10V , Ta = 70 | ID | 2.8 | -2.8 | |
| Continuous Source Current (Diode Conduction) | IS | 1.7 | -1.3 | |
| Pulsed Drain Current*1 | IDM | 16 | -10 | |
| Power Dissipation @Ta= 25 | PD | 2 | W | |
| Power Dissipation @Ta= 70 | 1.3 | W | ||
| Gate-to-Source Voltage | VGS | ±20 | ±20 | V |
| Drain-Source Voltage | VDS | 30 | 30 | V |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 150 | ||
| Repetitive Avalanche Energy | EAR | 0.25 | mJ | |
| Junction-to-Ambient*3 | RJA | 62.5 | /W | |
| Peak Diode Recovery dv/dt *2 | dv/dt | 5.0 | -5.0 | V/ ns |
| Single Pulse Avalanche Energy | EAS | 44 | 57 | mJ |
| Avalanche Current | IAR | 2.0 | -1.3 | A |
*2 N-Channel ISD 2.0A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.3A, di/dt 84A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
KRF9952 Features
·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Very Low Gate Charge and Switching Losses
·Fully Avalanche Rated
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Very Low Gate Charge and Switching Losses
·Fully Avalanche Rated
KRF9952 Connection Diagram
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