Position: Home  > All Categories> Integrated Circuits (ICs) > KRF9952

KRF9952

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Very Low Gate Charge and Switching Losses·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current,VGS@10V , Ta = 25 ID 3.5 -2.3 ...

product image

KRF9952 Picture
See larger image
SeekIC No. : 004387388 Detail

KRF9952: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Very Low Gate Charge and Switching Losses·Fully Avalanche RatedPinoutSpecifications Paramete...

KRF9952 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KRF9952
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Very Low Gate Charge and Switching Losses
·Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
Continuous Drain Current,VGS@10V , Ta = 25 ID 3.5 -2.3 A
Continuous Drain Current,VGS@10V , Ta = 70 ID 2.8 -2.8
Continuous Source Current (Diode Conduction) IS 1.7 -1.3
Pulsed Drain Current*1 IDM 16 -10
Power Dissipation @Ta= 25 PD 2 W
Power Dissipation @Ta= 70 1.3 W
Gate-to-Source Voltage VGS ±20 ±20 V
Drain-Source Voltage VDS 30 30 V
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150
Repetitive Avalanche Energy EAR 0.25 mJ
Junction-to-Ambient*3 RJA 62.5 /W
Peak Diode Recovery dv/dt *2 dv/dt 5.0 -5.0 V/ ns
Single Pulse Avalanche Energy EAS 44 57 mJ
Avalanche Current IAR 2.0 -1.3 A
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.0A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.3A, di/dt 84A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Undefined Category
VI-B63-IU
X27 589
Tapes, Adhesives
803
AC452-2
Prototyping Products
AVT4168
DE1
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Resistors
A101G
3006P-1-205LF
View more