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KRF9952

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Very Low Gate Charge and Switching Losses·Fully Avalanche RatedPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current,VGS@10V , Ta = 25 ID 3.5 -2.3 ...

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SeekIC No. : 004387388 Detail

KRF9952: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Very Low Gate Charge and Switching Losses·Fully Avalanche RatedPinoutSpecifications Paramete...

KRF9952 Data Sheet

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Part Number:
KRF9952
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Very Low Gate Charge and Switching Losses
·Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
Continuous Drain Current,VGS@10V , Ta = 25 ID 3.5 -2.3 A
Continuous Drain Current,VGS@10V , Ta = 70 ID 2.8 -2.8
Continuous Source Current (Diode Conduction) IS 1.7 -1.3
Pulsed Drain Current*1 IDM 16 -10
Power Dissipation @Ta= 25 PD 2 W
Power Dissipation @Ta= 70 1.3 W
Gate-to-Source Voltage VGS ±20 ±20 V
Drain-Source Voltage VDS 30 30 V
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150
Repetitive Avalanche Energy EAR 0.25 mJ
Junction-to-Ambient*3 RJA 62.5 /W
Peak Diode Recovery dv/dt *2 dv/dt 5.0 -5.0 V/ ns
Single Pulse Avalanche Energy EAS 44 57 mJ
Avalanche Current IAR 2.0 -1.3 A
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.0A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.3A, di/dt 84A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.




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