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KSA1406CSTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA1406CSTU Data Sheet

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Part Number:: KSA1406CSTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/24

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KSA1010 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	200 V
Emitter- Base Voltage VEBO :	- 4 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	400 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126
Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : - 4 V
Maximum Operating Frequency : 400 MHz

Parameters:

Technical/Catalog Information	KSA1406CSTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	100mA
Power - Max	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic	800mV @ 3mA, 30mA
Frequency - Transition	400MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSA1406CSTU KSA1406CSTU

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KSA1406CSTU

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