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KSA3010RTU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA3010RTU Data Sheet

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Part Number:: KSA3010RTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT)

Product Details

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	120 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	6 A
DC Collector/Base Gain hfe Min :	55	Configuration :	Single
Maximum Operating Frequency :	30 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 6 A
Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 120 V
DC Collector/Base Gain hfe Min : 55
Package / Case : TO-3P

Parameters:

Technical/Catalog Information	KSA3010RTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	6A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	55 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 500mA, 5A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSA3010RTU KSA3010RTU

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KSA3010RTU

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