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KSA643YBU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSA643YBU Data Sheet

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Part Number:: KSA643YBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/26

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KSA614 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
KSA614OTU evaluate
Transistors Bipolar (BJT) PNP Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	20 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Bulk

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40

Parameters:

Technical/Catalog Information	KSA643YBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	20V
Current - Collector (Ic) (Max)	500mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSA643YBU KSA643YBU

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KSA643YBU

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