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KSC1009YBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC1009YBU Data Sheet

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Part Number:: KSC1009YBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	8 V	Maximum DC Collector Current :	0.7 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	50 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 50 MHz
Emitter- Base Voltage VEBO : 8 V
Maximum DC Collector Current : 0.7 A
Collector- Emitter Voltage VCEO Max : 140 V

Parameters:

Technical/Catalog Information	KSC1009YBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	700mA
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic	700mV @ 20mA, 200mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC1009YBU KSC1009YBU

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