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KSC2001GTA

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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SeekIC No. : 00210615 Detail

KSC2001GTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSC2001GTA Data Sheet

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Part Number:
KSC2001GTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 90 Configuration : Single
Maximum Operating Frequency : 170 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
DC Collector/Base Gain hfe Min : 90
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 0.7 A
Maximum Operating Frequency : 170 MHz


Parameters:

Technical/Catalog InformationKSC2001GTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)700mA
Power - Max600mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 70mA, 700mA
Frequency - Transition170MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2001GTA
KSC2001GTA



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