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KSC2310RTA: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2310RTA Data Sheet

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Part Number:: KSC2310RTA
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/18

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KSC2001 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Transistor

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	150 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.05 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	100 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Packaging : Ammo
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 150 V
Maximum DC Collector Current : 0.05 A

Parameters:

Technical/Catalog Information	KSC2310RTA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	50mA
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92L
Packaging	Tape & Box (TB)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC2310RTA KSC2310RTA

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KSC2310RTA

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