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KSC2335OTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2335OTU Data Sheet

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Part Number:: KSC2335OTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/18

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KSC2001 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Transistor

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	7 A
DC Collector/Base Gain hfe Min :	20	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Package / Case : TO-220
Maximum DC Collector Current : 7 A

Parameters:

Technical/Catalog Information	KSC2335OTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	7A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 600mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	10A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC2335OTU KSC2335OTU

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