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KSC2669OBU

Transistors RF Bipolar Small Signal NPN Si Transistor Epitaxial

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SeekIC No. : 00218829 Detail

KSC2669OBU: Transistors RF Bipolar Small Signal NPN Si Transistor Epitaxial

KSC2669OBU Data Sheet

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Part Number:
KSC2669OBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 250 MHz Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 4 V Continuous Collector Current : 30 mA
Power Dissipation : 200 mW Maximum Operating Temperature : + 150 C
Package / Case : TO-92 Packaging : Bulk    

Description

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Power Dissipation : 200 mW
Continuous Collector Current : 30 mA
Package / Case : TO-92
Packaging : Bulk
Emitter- Base Voltage VEBO : 4 V
Collector- Emitter Voltage VCEO Max : 30 V
Maximum Operating Frequency : 250 MHz


Parameters:

Technical/Catalog InformationKSC2669OBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)30mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA, 12V
Vce Saturation (Max) @ Ib, Ic400mV @ 1mA, 10mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92S
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2669OBU
KSC2669OBU



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